TRANSISTOR METALLIZATION ENDCAP SCALING FOR PERFORMANCE OPTIMIZATION

原文（中国語）

Integrated circuit (IC) devices having transistors with electrodes and/or contacts in close proximity. An IC device includes a transistor structure having a channel between a source and a drain, a gate electrode over the channel region, and contacts on the source and the drain, and the electrode and contacts extend past an edge or sidewall of the channel different distances, that is, with unaligned ends. One or both of the source and drain contacts may extend past the gate electrode. The gate electrode may extend past one or both of the source and drain contacts. The source and drain contacts and the gate electrode may be formed to unaligned dimensions or may be disaligned by trimming.