L-SHAPED STACKED FIELD EFFECT TRANSISTOR

原文（中国語）

Embodiments of the present disclosure are directed to L-shaped stacked field effect transistor (SFET) processing methods and resulting structures having separate top and bottom self-aligned contact (SAC) caps. In a non-limiting embodiment, a first nanosheet stack having a first nanosheet and a second nanosheet stack having a second nanosheet are vertically stacked. A gate is formed around a channel region of the first nanosheet and a channel region of the second nanosheet. The gate includes a first portion recessed to a first gate height and a second portion recessed to a second gate height less than the first gate height. A bottom self-aligned contact cap is formed on the second portion of the gate and a top self-aligned contact cap is formed on the first portion of the gate.