THIN FILM TRANSISTORS HAVING REPLACEMENT CONTACT METALLIZATION
案件概要
出願人
Intel Corporation
発明者
Honore DJIEUTEDJEU; Vinaykumar V. HADAGALI; Yu-Wen HUANG; Abhishek Anil SHARMA; Van H. LE; Nikhil MEHTA; Christopher J. WIEGAND
IPC分類
CPC分類
Thin film transistors are described. An integrated circuit structure includes a gate electrode. A gate dielectric layer is on the gate electrode. A channel material layer is on the gate dielectric layer. Source or drain contacts are on the channel material layer. Each of the source or drain contacts has a first sidewall in contact with a dielectric backbone, and a second sidewall in contact with an insulating material having a composition different than the dielectric backbone.
原文（中国語）
Thin film transistors are described. An integrated circuit structure includes a gate electrode. A gate dielectric layer is on the gate electrode. A channel material layer is on the gate dielectric layer. Source or drain contacts are on the channel material layer. Each of the source or drain contacts has a first sidewall in contact with a dielectric backbone, and a second sidewall in contact with an insulating material having a composition different than the dielectric backbone.
外部リソース