SEMICONDUCTOR DEVICE INCLUDING BACKSIDE CONTACT PLUG

原文（中国語）

A semiconductor device includes: a first source/drain region and a second source/drain region on a first channel structure; a third source/drain region and a fourth source/drain region on a second channel structure; a first backside contact plug recessing the second source/drain region by a first depth from a lower surface of the second source/drain region; and a second backside contact plug recessing the fourth source/drain region by a second depth, smaller than the first depth, from a lower surface of the fourth source/drain region, wherein the second source/drain region comprises a first impurity region comprising a first impurity on an interface with the first backside contact plug, and the fourth source/drain region comprises another first impurity region comprising a second impurity on an interface with the second backside contact plug.