SEMICONDUCTOR DEVICE WITH PROGRAMMABLE STRUCTURE AND METHOD FOR FABRICATING THE SAME

原文（中国語）

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a peripheral impurity region positioned in the substrate; a top electrode layer positioned in the peripheral impurity region and protruding upwardly from the substrate; and a middle insulating layer inwardly positioned in the peripheral impurity region and partially surrounding the top electrode layer to separate the peripheral impurity region and the top electrode layer. The peripheral impurity region, the middle insulating layer, and the top electrode layer together configure a programmable structure.