INTEGRATED CIRCUIT STRUCTURES HAVING STRESS-INDUCING GATE CUT PLUGS

原文（中国語）

Integrated circuit structures having stress-inducing gate cut plugs are described. For example, a structure includes a first vertical stack of horizontal nanowires or fin over a first sub-fin. A first gate structure is over the first vertical stack of horizontal nanowires or fin. A second vertical stack of horizontal nanowires or fin is over a second sub-fin. A second gate structure is over the second fin. A gate cut separates a first gate electrode of the first gate structure from a second gate electrode of the second gate structure. A gate cut fill structure is in the gate cut, the gate cut fill structure including a first dielectric material portion in contact with the first gate electrode, a conductive via portion, and a second dielectric material portion in contact with the second gate electrode. The conductive via portion separates the first dielectric material portion from the second dielectric material portion.