CAPPING LAYER FOR TRANSITION METAL DICHALCOGENIDE BASED TRANSISTOR STRUCTURES
案件概要
発明者
Arnab Sen Gupta; Sarah Atanasov; Uygar E. Avci; Pratyush Buragohain; Jiun-Ruey Chen; Mahmut Sami Kavrik; Ande Kitamura; Chia-Ching Lin; Kirby Maxey; Matthew Metz; Carl H. Naylor; Kevin P. O’Brien
IPC分類
CPC分類
Devices, transistor structures, systems, and techniques are described herein related to field effect transistors having one or more metal chalcogenide nanoribbons coupled to a source and a drain. Channel regions of the metal chalcogenide nanoribbons are coupled to a gate structure between the source and the drain. The metal chalcogenide nanoribbons are capped with a layer including an oxide of a metal or metalloid element, optionally doped with or including carbon.
原文（中国語）
Devices, transistor structures, systems, and techniques are described herein related to field effect transistors having one or more metal chalcogenide nanoribbons coupled to a source and a drain. Channel regions of the metal chalcogenide nanoribbons are coupled to a gate structure between the source and the drain. The metal chalcogenide nanoribbons are capped with a layer including an oxide of a metal or metalloid element, optionally doped with or including carbon.
外部リソース