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案件記録

QUANTUM DEVICE AND METHOD FOR MANUFACTURING QUANTUM DEVICE

発明審査中
14請求項 · 2 独立
§ Ⅰ

案件概要

出願人

Fujitsu Limited

発明者

Daisuke SAIDA

IPC分類

H10D 48/G6N 10/40H10D 62/10H10D 80/20H10N 60/85

CPC分類

H10D48/383G6N10/40H10D62/115H10D80/20H10N60/855

A quantum device includes a first qubit substrate, a second qubit substrate, and a capacitive coupling substrate. The first qubit substrate includes a first qubit and a first electrode coupled to the first qubit. The second qubit substrate includes a second qubit and a second electrode coupled to the second qubit. The capacitive coupling substrate includes a third electrode capacitively coupled to the first electrode and the second electrode, a shield layer covering the first qubit and the second qubit, and an insulating film provided between the third electrode and the shield layer.

原文(中国語)

A quantum device includes a first qubit substrate, a second qubit substrate, and a capacitive coupling substrate. The first qubit substrate includes a first qubit and a first electrode coupled to the first qubit. The second qubit substrate includes a second qubit and a second electrode coupled to the second qubit. The capacitive coupling substrate includes a third electrode capacitively coupled to the first electrode and the second electrode, a shield layer covering the first qubit and the second qubit, and an insulating film provided between the third electrode and the shield layer.

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