QUANTUM DEVICE AND METHOD FOR MANUFACTURING QUANTUM DEVICE
案件概要
出願人
Fujitsu Limited
発明者
Daisuke SAIDA
IPC分類
CPC分類
A quantum device includes a first qubit substrate, a second qubit substrate, and a capacitive coupling substrate. The first qubit substrate includes a first qubit and a first electrode coupled to the first qubit. The second qubit substrate includes a second qubit and a second electrode coupled to the second qubit. The capacitive coupling substrate includes a third electrode capacitively coupled to the first electrode and the second electrode, a shield layer covering the first qubit and the second qubit, and an insulating film provided between the third electrode and the shield layer.
原文(中国語)
A quantum device includes a first qubit substrate, a second qubit substrate, and a capacitive coupling substrate. The first qubit substrate includes a first qubit and a first electrode coupled to the first qubit. The second qubit substrate includes a second qubit and a second electrode coupled to the second qubit. The capacitive coupling substrate includes a third electrode capacitively coupled to the first electrode and the second electrode, a shield layer covering the first qubit and the second qubit, and an insulating film provided between the third electrode and the shield layer.
外部リソース