BACKSIDE SUBSTRATE DIELECTRIC BREAK

原文（中国語）

A semiconductor device includes a passive device including a set of P-type doped regions, a set of N-type doped regions, a first N-well region and a second N-well region below the set of P-type doped regions and the set of N-type doped region, respectively, a first shallow trench isolation (STI) between the first N-well region and the second N-well region, a substrate below the first STI; and a dielectric break within the substrate. The dielectric break is vertically extended from the first STI to a bottom interlayer dielectric (BILD) below the substrate.