SELECTIVE LASER TREATMENTS FOR TRANSITION METAL DICHALCOGENIDE BASED TRANSISTOR STRUCTURES
案件概要
発明者
Carl H. Naylor; Christopher Jezewski; Matthew Metz; Uygar Avci; Kevin P. O’Brien; Scott B. Clendenning; Ashish Verma Penumatcha; Arnab Sen Gupta; Kirby Maxey; Eric Mattson; Mahmut Sami Kavrik; Azimkhan Kozhakhmetov; Chelsey Dorow
IPC分類
CPC分類
Devices, transistor structures, systems, and techniques are described herein related to field effect transistors having a stack of metal chalcogenide nanoribbons extending between a source and drain and contacted by a gate structure. The metal chalcogenide nanoribbons may be recrystallized using a local laser anneal treatment and/or a dopant may be applied, outside of a channel region of the metal chalcogenide nanoribbons, using a local laser treatment in the presence of a precursor including the dopant.
原文（中国語）
Devices, transistor structures, systems, and techniques are described herein related to field effect transistors having a stack of metal chalcogenide nanoribbons extending between a source and drain and contacted by a gate structure. The metal chalcogenide nanoribbons may be recrystallized using a local laser anneal treatment and/or a dopant may be applied, outside of a channel region of the metal chalcogenide nanoribbons, using a local laser treatment in the presence of a precursor including the dopant.
外部リソース