GATE-CONTROLLED SEMICONDUCTOR DEVICES HAVING TEMPERATURE COMPENSATED GATE RESISTANCES

原文（中国語）

Semiconductor devices comprise a semiconductor layer structure and a gate structure that comprises a high resistance portion and a low-resistance portion on the semiconductor layer structure. The high resistance portion of the gate structure comprises a first section that has a first resistance temperature coefficient and a second section that has a second resistance temperature coefficient that differs from the first resistance temperature coefficient.