SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE
案件概要
発明者
Shiro HINO; Akifumi IIJIMA; Kotaro KAWAHARA; Katsutoshi SUGAWARA; Katsuhiro FUJIYOSHI
IPC分類
CPC分類
A semiconductor device and a power conversion device each comprise a drift layer, a gate electrode to face a well region and a source region via a gate insulating film, a source electrode provided on an interlayer insulating film covering the gate electrode and connected to the well region and the source region, a first separation region provided in an active region in which a plurality of MOSFETs each including the well region, the source region, and the gate electrode are arranged in the drift layer, the first separation region being provided to be connected to the drift layer and forming Schottky connection with the source electrode, and a surge current conduction region provided in the active region, and blocks connection between the source electrode and the drift layer, thereby enabling the achievement of a semiconductor device and a power conversion device that exhibit high surge tolerance.
原文（中国語）
A semiconductor device and a power conversion device each comprise a drift layer, a gate electrode to face a well region and a source region via a gate insulating film, a source electrode provided on an interlayer insulating film covering the gate electrode and connected to the well region and the source region, a first separation region provided in an active region in which a plurality of MOSFETs each including the well region, the source region, and the gate electrode are arranged in the drift layer, the first separation region being provided to be connected to the drift layer and forming Schottky connection with the source electrode, and a surge current conduction region provided in the active region, and blocks connection between the source electrode and the drift layer, thereby enabling the achievement of a semiconductor device and a power conversion device that exhibit high surge tolerance.
外部リソース