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案件記録

SOLID PHASE EPITAXY OF AMORPHOUS SEMICONDUCTOR OVER A CRYSTALLINE SUBSTRATE

発明審査中
1閲覧数
26請求項 · 4 独立
§ Ⅰ

案件概要

発明者

Haowen Bu; Umamaheswari Aghoram; Jonathan Lewis; Xiangyu Zhu; Majid Movahed Mansoori

IPC分類

H1L 27/6H1L 21/2H1L 21/225H1L 29/94

CPC分類

H10D84/811H1L21/2592H1L21/2667H1L21/2253H10D1/665

A semiconductor device comprises a semiconductor substrate, a first crystalline silicon layer over the semiconductor substrate, an electronic component extending into the first crystalline silicon layer, a second crystalline silicon layer over the electronic component and the first crystalline silicon layer, and a layer of distributed silicon oxide inclusions between the first crystalline silicon layer and the second crystalline silicon layer.

原文(中国語)

A semiconductor device comprises a semiconductor substrate, a first crystalline silicon layer over the semiconductor substrate, an electronic component extending into the first crystalline silicon layer, a second crystalline silicon layer over the electronic component and the first crystalline silicon layer, and a layer of distributed silicon oxide inclusions between the first crystalline silicon layer and the second crystalline silicon layer.

外部リソース