EXTENDED GATE AND STANDARD GATE INTEGRATION SCHEME

原文（中国語）

Embodiments of the invention include a semiconductor structure having a first transistor including first channel regions, a high-k dielectric layer on the first channel regions, and gate material on the high-k dielectric layer. A second transistor includes second channel regions, a nitride layer on the second channel regions, the high-k dielectric layer on the nitride layer, and the gate material on the high-k dielectric layer. The first and second channel regions include a corresponding number of semiconductor layers.