INTEGRATED CIRCUIT DEVICE
案件概要
発明者
Youngjin YANG; Hongshin KIM; Nakyoung YANG
IPC分類
CPC分類
An integrated circuit device includes a hammer-shaped sheet separation wall between nanosheet stack structures, thereby improving a patterning margin of a gate electrode and preventing or reducing an effective channel width from being decreased. That is, the integrated circuit device may provide increased stable performance and improved reliability in a nanosheet field-effect transistor.
原文（中国語）
An integrated circuit device includes a hammer-shaped sheet separation wall between nanosheet stack structures, thereby improving a patterning margin of a gate electrode and preventing or reducing an effective channel width from being decreased. That is, the integrated circuit device may provide increased stable performance and improved reliability in a nanosheet field-effect transistor.
外部リソース