SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
案件概要
発明者
Takuto WATANABE; Takahiro MORI
IPC分類
CPC分類
An n-type source region and an n-type drain region NDare formed in a semiconductor substrate. A gate electrode is formed via a gate insulating film on a portion of the semiconductor substrate located between the source region and the drain region. A p-type impurity region is: formed in a portion of the semiconductor substrate located under the drain region, under the gate electrode, and under the source region. An impurity concentration of the impurity region is higher than an impurity concentration of the semiconductor substrate. The impurity region is spaced apart from an upper surface of the semiconductor substrate.
原文（中国語）
An n-type source region and an n-type drain region NDare formed in a semiconductor substrate. A gate electrode is formed via a gate insulating film on a portion of the semiconductor substrate located between the source region and the drain region. A p-type impurity region is: formed in a portion of the semiconductor substrate located under the drain region, under the gate electrode, and under the source region. An impurity concentration of the impurity region is higher than an impurity concentration of the semiconductor substrate. The impurity region is spaced apart from an upper surface of the semiconductor substrate.
外部リソース