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案件記録

IMAGE SENSOR

発明審査中
2閲覧数
20請求項 · 3 独立
§ Ⅰ

案件概要

発明者

Mintae CHUNG; Donghyun KIM; Dong-Chul LEE; Tae-Hun LEE; Sungsoo CHOI

IPC分類

H10F 39/

CPC分類

H10F39/811H10F39/802

An image sensor may include a substrate and a plurality of pixel regions. At least one of the plurality of pixel regions includes a photoelectric conversion portion in the substrate and a pixel circuit adjacent to the first surface of the substrate. The pixel circuit may include a plurality of buried patterns, which each may have a buried structure in the substrate. The pixel circuit may include a first transistor including a first gate electrode and a second transistor including a second gate electrode. The first gate electrode may be a vertical transfer gate electrode. A cross-sectional shape of the second gate electrode may be different from a cross-sectional shape of the first gate electrode. The plurality of buried patterns may include the first gate electrode and the second gate electrode.

原文(中国語)

An image sensor may include a substrate and a plurality of pixel regions. At least one of the plurality of pixel regions includes a photoelectric conversion portion in the substrate and a pixel circuit adjacent to the first surface of the substrate. The pixel circuit may include a plurality of buried patterns, which each may have a buried structure in the substrate. The pixel circuit may include a first transistor including a first gate electrode and a second transistor including a second gate electrode. The first gate electrode may be a vertical transfer gate electrode. A cross-sectional shape of the second gate electrode may be different from a cross-sectional shape of the first gate electrode. The plurality of buried patterns may include the first gate electrode and the second gate electrode.

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