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案件記録

BACK-CONTACT SOLAR CELL AND PREPARATION METHOD THEREFOR

発明審査中
6閲覧数
26請求項 · 10 独立
§ Ⅰ

案件概要

発明者

Dongwei ZHANG; Shuai WU; Yunpeng LI; Feng YE; Liang FANG; Xixiang XU

IPC分類

H10F 77/14H10F 10/174H10F 71/

CPC分類

H10F77/147H10F10/174H10F71/1221

The present application discloses a back-contact solar cell and a preparation method thereof. The back-contact solar cell includes: a semiconductor substrate; a tunnel oxide layer and a doped crystalline silicon layer, where the tunnel oxide layer is located in a first region, and the doped crystalline silicon layer is located on a surface of the tunnel oxide layer away from the semiconductor substrate; an intrinsic non-crystalline silicon layer and a doped non-crystalline silicon layer where the intrinsic non-crystalline silicon layer is located in a second region and extends on part of a surface of the doped crystalline silicon layer away from the tunnel oxide layer, and the doped non-crystalline silicon layer is located on a surface of the intrinsic non-crystalline silicon layer away from the semiconductor substrate; and an isolating structure including an isolating layer and an isolating groove.

原文(中国語)

The present application discloses a back-contact solar cell and a preparation method thereof. The back-contact solar cell includes: a semiconductor substrate; a tunnel oxide layer and a doped crystalline silicon layer, where the tunnel oxide layer is located in a first region, and the doped crystalline silicon layer is located on a surface of the tunnel oxide layer away from the semiconductor substrate; an intrinsic non-crystalline silicon layer and a doped non-crystalline silicon layer where the intrinsic non-crystalline silicon layer is located in a second region and extends on part of a surface of the doped crystalline silicon layer away from the tunnel oxide layer, and the doped non-crystalline silicon layer is located on a surface of the intrinsic non-crystalline silicon layer away from the semiconductor substrate; and an isolating structure including an isolating layer and an isolating groove.

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