METAL OXIDE SEMICONDUCTOR-BASED LIGHT EMITTING DEVICE
案件概要
発明者
Petar Atanackovic
IPC分類
CPC分類
A semiconductor structure includes a superlattice with two or more unit cells, wherein each of the unit cells includes a first epitaxial layer including NiO or GaO. Each of the unit cells can further include a second epitaxial layer including a second epitaxial oxide material selected from NiGaOor NiAlO, where 0<z<1. In some cases, the second epitaxial oxide material can include Ni(Al,Ga)O.
原文（中国語）
A semiconductor structure includes a superlattice with two or more unit cells, wherein each of the unit cells includes a first epitaxial layer including NiO or GaO. Each of the unit cells can further include a second epitaxial layer including a second epitaxial oxide material selected from NiGaOor NiAlO, where 0<z<1. In some cases, the second epitaxial oxide material can include Ni(Al,Ga)O.
外部リソース