METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
案件概要
発明者
Akihiro HANADA; Motochika YUKAWA; Takuo KAITOH
IPC分類
CPC分類
A method for manufacturing a semiconductor device for radiation detection device according to an embodiment of the present invention includes: forming a first gate electrode above an insulating surface; forming a first nitride insulating layer above the first gate electrode; forming a first oxide insulating layer above the first nitride insulating layer, a thickness of the first oxide insulating layer being 20 nm or less; forming an oxide semiconductor layer above the first oxide insulating layer; forming a transparent conductive layer above the oxide semiconductor layer; and forming a source electrode and a drain electrode by etching the transparent conductive layer using the first oxide insulating layer and the oxide semiconductor layer as etching stoppers.
原文（中国語）
A method for manufacturing a semiconductor device for radiation detection device according to an embodiment of the present invention includes: forming a first gate electrode above an insulating surface; forming a first nitride insulating layer above the first gate electrode; forming a first oxide insulating layer above the first nitride insulating layer, a thickness of the first oxide insulating layer being 20 nm or less; forming an oxide semiconductor layer above the first oxide insulating layer; forming a transparent conductive layer above the oxide semiconductor layer; and forming a source electrode and a drain electrode by etching the transparent conductive layer using the first oxide insulating layer and the oxide semiconductor layer as etching stoppers.
外部リソース