PROJECTED PHASE CHANGE MEMORY DEVICE WITH LOW-CONDUCTANCE NON-VOLATILE STATES

原文（中国語）

A PCM memory structure having extended projection liner material portion to reduce conductance value in a SET state and increase power efficiency. The projection liner material layer includes bottom and vertically extending liner sidewall portions. A phase change material (PCM) layer positioned above the projection liner material layer also has vertically extended PCM sidewall portions that are shorter than the vertically extending liner sidewall portions, thereby increasing the length of the liner relative to a length of the PCM layer. In a RESET state, current flow bypasses an amorphous volume to reduce the device non-idealities yet leverage the in-plane resistivity of the liner to provide projection in the RESET states and to lower the conductance in the SET states of the device thereby reducing current and power dissipation and power consumption will be lowered when in a SET state.