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案件記録

Power semiconductor device, power device module, bridge arm circuit and electronic equipment

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92607159ファミリー
§ Ⅰ

案件概要

出願人

HUAWEI TECH CO LTD

出願番号

CN202310261822

発明者

CHEN LINGLIN; TANG LONGGU; GAO BO; ZHENG SHENG; XU SHANFENG

出願日

Mar 10, 2023

公開日

Sep 10, 2024

パテントファミリーID

92607159

IPC分類

H01L27/088H02M1/00H02M1/088

CPC分類

H02M1/0006H02M1/088

The embodiment of the invention provides a power semiconductor device, a power device module, a bridge arm circuit and electronic equipment, relates to the field of semiconductor devices, and aims to solve the problem that bridge arm crosstalk may be generated when the power semiconductor device is applied to the bridge arm circuit as a switching device. The power semiconductor device comprises a power transistor and a discharge transistor which are integrated in a chip; the power transistor comprises a first grid electrode, a first source electrode and a first drain electrode, and the discharge transistor comprises a second grid electrode, a second source electrode and a second drain electrode; one of the second source electrode and the second drain electrode is connected with the first grid electrode, and the other of the second source electrode and the second drain electrode is connected with the first source electrode. The power semiconductor device can be applied to a power device module, a bridge arm circuit and electronic equipment.

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