Transistor structure, radio frequency front-end device and electronic equipment

The invention provides a transistor structure, a radio frequency front-end device and electronic equipment. The transistor structure comprises a substrate, an active layer located on the substrate, a gate layer located on the side, away from the substrate, of the active layer, and a gate dielectric layer located between the active layer and the gate layer. The transistor structure further comprises a plurality of isolation grooves, and each isolation groove penetrates through the active layer in the thickness direction. The active layer comprises at least one first channel, each first channel is located between two adjacent isolation grooves, each first channel comprises a first surface, a first side surface and a second side surface, and the pattern of the gate layer covers the first surface, the first side surface and the second side surface of each first channel. In the embodiment of the invention, the pattern of the gate layer can surround the first channel from three sides, and when the transistor structure is turned on, the first channel in the active layer is completely exhausted, so that the defects of floating body effect, short channel effect, source-drain parasitic capacitance and the like of the transistor structure are prevented, and the performance of the transistor structure is improved.