Electronic device, manufacturing method thereof and electronic equipment
データ提供元:EPO OPS
本文を取得できませんでした。取得済みの書誌情報は引き続き確認できます。
案件概要
出願番号
CN202310286204
発明者
ZHAO YANCHONG; BAI XIAOYANG; DONG JINWEN; ZHU JIFENG
出願日
Mar 14, 2023
公開日
Sep 20, 2024
パテントファミリーID
92721587
IPC分類
The invention provides an electronic device, a manufacturing method thereof and electronic equipment, relates to the technical field of semiconductors, and can utilize a bonding mode to link a two-dimensional material and a semiconductor process. The electronic device comprises a first structure and a second structure; a bonding interface is arranged between the first structure and the second structure, and a plurality of transistors are formed on the bonding interface of the first structure and the second structure. The first structure comprises a substrate and channel layers of a plurality of transistors; the channel layer is located on the surface of the side, facing the second structure, of the substrate, and the channel layer comprises a two-dimensional material. The second structure comprises source metal electrodes, drain metal electrodes and grid electrodes of the plurality of transistors, and the source metal electrodes and the drain metal electrodes are in contact with the channel layer at a bonding interface. By bonding the first structure and the second structure, connection between the two-dimensional material and a semiconductor process is achieved, and the large-scale application requirement of the two-dimensional material is met.
EPO 調査資料
項目を選択すると、この公開文献の公式資料を取得します。
上の項目を選択して資料を取得してください。
外部リソース