Storage array, electronic equipment, memory and manufacturing method of storage array

The embodiment of the invention provides a storage array, electronic equipment, a memory and a manufacturing method of the storage array, which are used for solving the technical problem of crosstalk of the memory. The memory array comprises a transistor and a selection layer capable of realizing an on-off function. The memory layer is disposed between the selection layer and the channel layer such that the transistor is connected in series with the selection layer such that the transistor and the selector appear in pairs. And when the storage array performs read-write operation, the working state of the transistor is controlled by the opening and closing state of the selection layer. For example, when the storage array writes' 1 'operation, the selection layer can be opened in the forward direction, the storage layer can be pulled up to a high potential due to the fact that the storage layer is electrically connected with the selection layer, and' 1 'writing is completed. And when the selection layer is in a closed state, the storage array does not perform write operation. In this way, crosstalk of the memory during write operation is avoided. The storage array provided by the embodiment of the invention is simple in structure, and the storage density of the storage array can be increased.