Semiconductor device, manufacturing method thereof and electronic equipment

The invention provides a semiconductor device, a manufacturing method thereof and electronic equipment, the semiconductor device comprises a ferroelectric structure and a plurality of electrodes, the included angle between the polarization direction of an electric domain in a first protruding part in the ferroelectric structure and the polarization direction of an electric domain in a body is [0 degree, 90 degrees], the included angle between the polarization direction of the electric domain in the second protruding part in the ferroelectric structure and the polarization direction of the electric domain in the body is (90 degrees, 270 degrees), a PN junction is formed by a first connection position between the first protruding part and the body and a second connection position between the second protruding part and the body, and the plurality of electrodes are in contact with the first connection position and the second connection position respectively. Therefore, the PN junction can be made of ferroelectric materials, compared with a traditional PN junction, the manufacturing process is simpler, a doping process does not need to be executed, the temperature of the manufacturing process is lower, and the manufacturing cost is lower.