SINGLE-CRYSTALLINE AL2O3 DIELECTRIC COMPATIBLE WITH TWO-DIMENSIONAL MATERIALS AND INTEGRATED DEVICE THEREOF
SINGLE-CRYSTALLINE AL2O3 DIELECTRIC COMPATIBLE WITH TWO-DIMENSIONAL MATERIALS AND INTEGRATED DEVICE THEREOF
The present invention relates to a single-crystalline AlOdielectric compatible with two-dimensional materials and an integrated device thereof. A single-crystalline Al thin film is produced on a single-crystalline graphene/germanium (110) substrate via the van der Waals (vdW) epitaxy approach, the single-crystalline Al thin film is peeled off from the graphene/germanium substrate, and intercalative oxidation is performed to produce the single-crystalline AlOdielectric compatible with two-dimensional materials on the lower surface of the single-crystalline Al thin film. The gate leakage current (J<1×10A cm), interface state density (D=8.4×10cmeV), and dielectric strength (E=17.4 MV/cm) of the single-crystalline AlOdielectric obtained in the present invention can meet the requirements of the international roadmap for devices and systems (IRDS) for low power consumption devices.