원래 이름 기록: Semiconductor Energy Laboratory Co., Ltd.

To provide a highly browsable data processing device or a highly portable data processing device, a data processing device including the following is devised: an input/output unit provided with a display portion which can be folded and unfolded and a sensor portion that can sense the folded and unfolded states of the display portion and can supply data on fold, and an arithmetic unit that stores a program for executing different processing depending on the data on fold.

A semiconductor device having high storage density is provided. The semiconductor device includes a first layer and a second layer above the first layer. The first layer includes first to fourth conductors, first to fifth insulators, and a first semiconductor, and the second layer includes fifth to seventh conductors, sixth and seventh insulators, and a second semiconductor. The first insulator, the second conductor, the second insulator, and the third conductor are formed in this order over the first conductor, and a first opening having a bottom surface of the first conductor is provided in the first insulator, the second insulator, and the third conductor. In the first opening, a first semiconductor, the fourth insulator, and the fourth conductor are formed in this order. The third insulator is positioned on a side surface of the third conductor and a top surface of the second insulator. The fifth conductor is positioned on a top surface of the fourth conductor and a top surface of the fifth insulator. The sixth insulator and the sixth conductor are formed in this order over the fifth conductor, and a second opening with a bottom surface of the fifth conductor is provided in the sixth insulator and the sixth conductor. In the second opening, a second semiconductor, a seventh insulator, and a seventh conductor are formed in this order.

A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a transistor including a gate electrode, a source electrode, and a drain electrode; a first insulator over the transistor; a second insulator over the first insulator; a third insulator over the second insulator; a first electrode in contact with the top surface of the source electrode; and a second electrode in contact with the top surface of the drain electrode. The second insulator includes a first opening portion overlapping with the source electrode and a second opening portion overlapping with the drain electrode. The third insulator is in contact with the side surface of the second insulator and the top surface of the first insulator inside the first opening portion and the second opening portion. The first electrode is positioned through the first opening portion. The second electrode is positioned through the second opening portion.

A miniaturized transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A transistor having a large amount of on-state current is provided. A semiconductor device including the transistor is provided. A semiconductor device with high integration is provided. A novel capacitor is provided. The capacitor includes a first conductor, a second conductor, and an insulator. The first conductor includes a region overlapping with the second conductor with the insulator provided therebetween. The first conductor includes tungsten and silicon. The insulator includes a silicon oxide film that is formed by oxidizing the first conductor.

To reduce power consumption and suppress display degradation of a liquid crystal display device. To suppress display degradation due to an external factor such as temperature. A transistor whose channel formation region is formed using an oxide semiconductor layer is used for a transistor provided in each pixel. Note that with the use of a high-purity oxide semiconductor layer, off-state current of the transistor at a room temperature can be 10 aA/μm or less and off-state current at 85° C. can be 100 aA/μm or less. Consequently, power consumption of a liquid crystal display device can be reduced and display degradation can be suppressed. Further, as described above, off-state current of the transistor at a temperature as high as 85° C. can be 100 aA/μm or less. Thus, display degradation of a liquid crystal display device due to an external factor such as temperature can be suppressed.

An oxide semiconductor layer which is intrinsic or substantially intrinsic and includes a crystalline region in a surface portion of the oxide semiconductor layer is used for the transistors. An intrinsic or substantially intrinsic semiconductor from which an impurity which is to be an electron donor (donor) is removed from an oxide semiconductor and which has a larger energy gap than a silicon semiconductor is used. Electrical characteristics of the transistors can be controlled by controlling the potential of a pair of conductive films which are provided on opposite sides from each other with respect to the oxide semiconductor layer, each with an insulating film arranged therebetween, so that the position of a channel formed in the oxide semiconductor layer is determined.

A carrier-transport material or a hole-transport material that enables formation of a film having a low refractive index and a large GSP_slope is provided. An organic compound represented by General Formula (G1) is provided. In the organic compound represented by General Formula (G1), Arrepresents a phenyl group or a biphenyl group having at least one alkyl group having 1 to 6 carbon atoms. Furthermore, Rrepresents an alkyl group having 3 to 7 carbon atoms, and n represents 2 or 3. Rand Reach independently represent any one of an alkyl group having 1 to 6 carbon atoms, an unsubstituted phenyl group, and a phenyl group having an alkyl group having 1 to 6 carbon atoms, and Rand Rmay be bonded to each other to form a ring. Rrepresents hydrogen or an alkyl group having 1 to 6 carbon atoms.