원래 이름 기록: WUHAN XINXIN SEMICONDUCTOR MANUFACTURING CO., LTD.

The present disclosure provides a semiconductor device and a method of fabricating the same. The semiconductor device includes: a substrate; a gate layer formed over the substrate, which includes a main gate and an extended gate spaced apart from each other; and an insulating dielectric layer formed on the substrate and connecting the main gate and the extended gate. The present disclosure allows the gate layer to function as desired while avoiding performance of the semiconductor device from being degraded due to the presence of parasitic capacitance.