원래 이름 기록: Samsung Electronics Co., Ltd.; KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Provided are a manufacturing method of an oxide thin film and an apparatus including the oxide thin film. The manufacturing method of the oxide thin film includes forming an amorphous oxide layer on a base layer, raising a temperature of the amorphous oxide layer using microwaves at a first pressure, and forming a crystal structure in the oxide thin film by cooling the temperature-raised oxide layer at a second pressure different from the first pressure.