CNIPA.AI
검색으로 돌아가기
기록

WAFER GRINDING METHODS

발명심사 중
2조회수
14청구항 · 2 독립항
§ Ⅰ

개요

발명자

YiJing Eric CHONG; Rowena ZARATE; Marites ROQUE; PeiEe Linda CHUA; KaiChong CHAN

IPC 분류

B24B 37/4H1L 21/304

CPC 분류

B24B37/42H1L21/304

A wafer grinding method comprises: providing a wafer base comprising a front side and a back side, wherein the front side comprises a solder ball area and an annular peripheral area surrounding the solder ball area; forming a patterned photoresist layer on the front side of the wafer base, wherein the patterned photoresist layer at least partially covers the annular peripheral area but exposes the solder ball area; forming solder balls on the solder ball area; attaching a back grinding tape on the front side to cover both the solder ball area and the annular peripheral area; and performing a back grinding process on the back side of the wafer base.

원문 (중국어)

A wafer grinding method comprises: providing a wafer base comprising a front side and a back side, wherein the front side comprises a solder ball area and an annular peripheral area surrounding the solder ball area; forming a patterned photoresist layer on the front side of the wafer base, wherein the patterned photoresist layer at least partially covers the annular peripheral area but exposes the solder ball area; forming solder balls on the solder ball area; attaching a back grinding tape on the front side to cover both the solder ball area and the annular peripheral area; and performing a back grinding process on the back side of the wafer base.