SPUTTERING APPARATUS AND DEPOSITION METHOD OF TUNGSTEN FILM
개요
발명자
Yutaka NAKAMITSU
IPC 분류
CPC 분류
A substrate stage holding a substrate to be treated in a vacuum chamber in which a target made of tungsten is mounted and a high-frequency power source supplying a high-frequency electric power to the substrate stage are provided. When a first plasma atmosphere is generated in the vacuum chamber, and sputtered particles generated by sputtering the target are adhered and accumulated on the substrate so that a tungsten film is deposited, a second plasma atmosphere is generated by supplying the high-frequency electric power to the substrate stage, and plus ions in the first plasma atmosphere are also caused to collide with the substrate. Provided that an area of a substrate holding surface of the substrate stage functioning as one electrode and an inner-surface area of the vacuum chamber functioning as the other electrode of the second plasma atmosphere are defined as an anode area and a cathode area, respectively.
원문 (중국어)
A substrate stage holding a substrate to be treated in a vacuum chamber in which a target made of tungsten is mounted and a high-frequency power source supplying a high-frequency electric power to the substrate stage are provided. When a first plasma atmosphere is generated in the vacuum chamber, and sputtered particles generated by sputtering the target are adhered and accumulated on the substrate so that a tungsten film is deposited, a second plasma atmosphere is generated by supplying the high-frequency electric power to the substrate stage, and plus ions in the first plasma atmosphere are also caused to collide with the substrate. Provided that an area of a substrate holding surface of the substrate stage functioning as one electrode and an inner-surface area of the vacuum chamber functioning as the other electrode of the second plasma atmosphere are defined as an anode area and a cathode area, respectively.