METHOD FOR PRODUCING SILICON FILM AND SILICON FILM
개요
출원인
NIPPON SHOKUBAI CO., LTD.; HIROSHIMA UNIVERSITY
발명자
Tetsuya YAMAMOTO; Takashi ABE; Tatsuhiko AKIYAMA; Akinobu TERAMOTO
IPC 분류
CPC 분류
The object of the present invention is to provide a method for producing a silicon film having high uniformity of film thickness or high step coverage through reduction of the thermal history of a cyclic silane compound. The present invention relates to a method for producing a silicon film, including the steps of heating a substrate inserted into a reactor of a cold-wall type thermal CVD system, supplying the cyclic silane compound to the reactor, and forming the silicon film on the substrate.
원문 (중국어)
The object of the present invention is to provide a method for producing a silicon film having high uniformity of film thickness or high step coverage through reduction of the thermal history of a cyclic silane compound. The present invention relates to a method for producing a silicon film, including the steps of heating a substrate inserted into a reactor of a cold-wall type thermal CVD system, supplying the cyclic silane compound to the reactor, and forming the silicon film on the substrate.