SUBSTRATE PROCESSING APPARATUS
개요
발명자
Jae Hoon KIM; Kyung Rim KIM; Dong Hee HAN
IPC 분류
CPC 분류
A substrate treating apparatus includes a pipe for providing a precursor and having a first zone and a second zone. A first heater provides heat to an inside of the pipe in the first zone, and a first ultrasonic sensor in the first zone generates a first ultrasonic wave directed to the inside of the pipe and receives a first reflected wave from the inside of the pipe. A second heater provides heat into the inside of the pipe in the second zone, and a second ultrasonic sensor in the second zone generates a second ultrasonic wave directed to the inside of the pipe and receives a second reflected wave from the inside of the pipe. A controller analyzes the first reflected wave and the second reflected wave to determine whether a contaminant has formed inside the pipe in the first zone or the second zone.
원문 (중국어)
A substrate treating apparatus includes a pipe for providing a precursor and having a first zone and a second zone. A first heater provides heat to an inside of the pipe in the first zone, and a first ultrasonic sensor in the first zone generates a first ultrasonic wave directed to the inside of the pipe and receives a first reflected wave from the inside of the pipe. A second heater provides heat into the inside of the pipe in the second zone, and a second ultrasonic sensor in the second zone generates a second ultrasonic wave directed to the inside of the pipe and receives a second reflected wave from the inside of the pipe. A controller analyzes the first reflected wave and the second reflected wave to determine whether a contaminant has formed inside the pipe in the first zone or the second zone.