INDIUM PHOSPHIDE SINGLE-CRYSTAL SUBSTRATE AND MANUFACTURING METHOD FOR INDIUM PHOSPHIDE SINGLE-CRYSTAL
개요
출원인
SUMITOMO ELECTRIC INDUSTRIES, LTD.
발명자
Yuka KIDO; Ryoji SAKAMOTO; Takuya YANAGISAWA; Yusuke YOSHIZUMI; Katsushi HASHIO
IPC 분류
CPC 분류
The indium phosphide single-crystal substrate has a circular main surface, and the main surface is virtually divided with a square grid at a grid interval of 1 mm. The square grid is composed of a plurality of grid points present along a first direction and a second direction orthogonal to the first direction. A set consisting of dislocation densities measured at the respective grid points has a first whole-surface mean as the mean of the set and a first whole-surface standard deviation as the standard deviation of the set, and each of the dislocation densities is classified as any one of a first level, a second level, and a third level. The grid points each determined to have a dislocation density classified as the second level are present in a region between an outline of a first square region and an outline of a second square region.
원문 (중국어)
The indium phosphide single-crystal substrate has a circular main surface, and the main surface is virtually divided with a square grid at a grid interval of 1 mm. The square grid is composed of a plurality of grid points present along a first direction and a second direction orthogonal to the first direction. A set consisting of dislocation densities measured at the respective grid points has a first whole-surface mean as the mean of the set and a first whole-surface standard deviation as the standard deviation of the set, and each of the dislocation densities is classified as any one of a first level, a second level, and a third level. The grid points each determined to have a dislocation density classified as the second level are present in a region between an outline of a first square region and an outline of a second square region.