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기록

PHOTONIC INTEGRATED CIRCUIT, METHOD OF MANUFACTURING THE PHOTONIC INTEGRATED CIRCUIT, AND ELECTRONIC APPARATUS INCLUDING THE PHOTONIC INTEGRATED CIRCUIT

발명심사 중
20청구항 · 2 독립항
§ Ⅰ

개요

출원인

SAMSUNG ELECTRONICS CO., LTD.

발명자

Jungho CHA; Woosung KIM; Hyunil BYUN; Changgyun SHIN; Dongsik SHIM; Bongyong JANG

IPC 분류

G2B 6/12G2B 6/136

CPC 분류

G2B6/12004G2B6/136G2B2006/121G2B2006/12109G2B2006/12121G2B2006/12123G2B2006/12142G2B2006/12147

Provided is a photonic integrated circuit including a substrate including a trench, a light source on the substrate and adjacent to the trench, the light source including a first electrode and a second electrode that are in an upper portion of the light source, at least one optical element on the substrate and optically connected to the light source, and a waveguide between the light source and the at least one optical element, wherein the substrate includes a first semiconductor layer, a dielectric layer on the first semiconductor layer, and a second semiconductor layer on the dielectric layer, the trench penetrates the second semiconductor layer and the dielectric layer, and the first electrode includes an extension on a side wall surface of the light source and in the trench, the light source further includes a first reflective surface and a second reflective surface that are spaced apart from each other.

원문 (중국어)

Provided is a photonic integrated circuit including a substrate including a trench, a light source on the substrate and adjacent to the trench, the light source including a first electrode and a second electrode that are in an upper portion of the light source, at least one optical element on the substrate and optically connected to the light source, and a waveguide between the light source and the at least one optical element, wherein the substrate includes a first semiconductor layer, a dielectric layer on the first semiconductor layer, and a second semiconductor layer on the dielectric layer, the trench penetrates the second semiconductor layer and the dielectric layer, and the first electrode includes an extension on a side wall surface of the light source and in the trench, the light source further includes a first reflective surface and a second reflective surface that are spaced apart from each other.