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기록

MASK PATTERN FORMATION METHOD AND SUBSTRATE PROCESSING METHOD

발명심사 중
8청구항 · 1 독립항
§ Ⅰ

개요

발명자

Shin OOWADA; Ryuichi ASAKO; Makoto MURAMATSU; Tsutomu ONO; Takaichi WATANABE

IPC 분류

G3F 1/80H1L 21/27H1L 21/308

CPC 분류

G3F1/80H1L21/271H1L21/308

A mask pattern formation method includes applying a substance that includes a polymerizable ionic liquid to a substrate, causing a polymerization reaction of the polymerizable ionic liquid for at least a part of the substance that includes a polymerizable ionic liquid to produce a substance that include a polymeric ionic liquid on the substrate, and forming a mask pattern of the substance that includes a polymeric ionic liquid on the substrate by using the substance that includes a polymeric ionic liquid.

원문 (중국어)

A mask pattern formation method includes applying a substance that includes a polymerizable ionic liquid to a substrate, causing a polymerization reaction of the polymerizable ionic liquid for at least a part of the substance that includes a polymerizable ionic liquid to produce a substance that include a polymeric ionic liquid on the substrate, and forming a mask pattern of the substance that includes a polymeric ionic liquid on the substrate by using the substance that includes a polymeric ionic liquid.