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기록

RESIST COMPOSITION AND PATTERN FORMING PROCESS

발명심사 중
1조회수
12청구항 · 1 독립항
§ Ⅰ

개요

발명자

Yutaro Otomo; Takahiro Suzuki; Kazuhiro Katayama; Takeshi Sasami; Yoshihiro Tsuji; Tatsuya Suzuki

IPC 분류

G3F 7/38C8F 220/18C8F 220/22G3F 7/G3F 7/4G3F 7/39

CPC 분류

G3F7/388C8F220/1806C8F220/1807C8F220/22G3F7/45G3F7/46G3F7/39C8F2800/10G3F7/70033

A resist composition comprising a base polymer comprising repeat units consisting of a carboxylic acid anion having iodine and a specific functional group, bonded to the backbone and an organic cation and repeat units consisting of a sulfonic acid anion bonded to the backbone and a sulfonium cation has a high sensitivity and a high contrast of alkaline dissolution rate before and after exposure. A pattern of satisfactory profile with reduced LWR and improved CDU is formed therefrom.

원문 (중국어)

A resist composition comprising a base polymer comprising repeat units consisting of a carboxylic acid anion having iodine and a specific functional group, bonded to the backbone and an organic cation and repeat units consisting of a sulfonic acid anion bonded to the backbone and a sulfonium cation has a high sensitivity and a high contrast of alkaline dissolution rate before and after exposure. A pattern of satisfactory profile with reduced LWR and improved CDU is formed therefrom.