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기록

DRY DEVELOP PROCESS OF PHOTORESIST

발명심사 중
2조회수
20청구항 · 3 독립항
§ Ⅰ

개요

발명자

YUQIONG DAI; MADHUR SACHAN; REGINA FREED; HO-YUNG DAVID HWANG

IPC 분류

G3F 7/40C23C 16/6G3F 7/4G3F 7/16G3F 7/20

CPC 분류

G3F7/40C23C16/6G3F7/47G3F7/162G3F7/20

Embodiments disclosed herein include a method of developing a metal oxo photoresist with a non-wet process. In an embodiment, the method comprises providing a substrate with the metal oxo photoresist into a chamber. In an embodiment, the metal oxo photoresist comprises exposed regions and unexposed regions, and the unexposed regions comprise a higher carbon concentration than the exposed regions. In an embodiment, the method further comprises flowing a gas into the chamber, wherein the gas reacts with the unexposed regions to produce a volatile byproduct.

원문 (중국어)

Embodiments disclosed herein include a method of developing a metal oxo photoresist with a non-wet process. In an embodiment, the method comprises providing a substrate with the metal oxo photoresist into a chamber. In an embodiment, the metal oxo photoresist comprises exposed regions and unexposed regions, and the unexposed regions comprise a higher carbon concentration than the exposed regions. In an embodiment, the method further comprises flowing a gas into the chamber, wherein the gas reacts with the unexposed regions to produce a volatile byproduct.