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기록

MEMORY WITH REDUNDANT READ OPTIMIZATION

발명심사 중
2조회수
20청구항 · 3 독립항
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개요

발명자

Asheesh Singh BAGHEL; Amit DUGGAL; Sateeshkumar INJARAPU

IPC 분류

G11C 7/10H3K 19/173

CPC 분류

G11C7/109G11C7/1069H3K19/1737

A memory is provided with a redundant read logic circuit that detects whether a current read operation should proceed as a redundant or non-redundant read operation. In a redundant read operation, the memory does not assert a word line voltage nor does it enable any sense amplifiers. The data for a redundant read operation is thus not provided by the memory but instead is retrieved from a global input/output (GIO) memory circuit such as a GIO latch.

원문 (중국어)

A memory is provided with a redundant read logic circuit that detects whether a current read operation should proceed as a redundant or non-redundant read operation. In a redundant read operation, the memory does not assert a word line voltage nor does it enable any sense amplifiers. The data for a redundant read operation is thus not provided by the memory but instead is retrieved from a global input/output (GIO) memory circuit such as a GIO latch.