APPARATUS AND METHODS FOR AMPLIFIER CIRCUITS FOR READING MRAM MEMORY CELLS
개요
발명자
Nicolas Irizarry; Ashraf B. Islam; Jaydip Patel; Christopher J. Petti
IPC 분류
CPC 분류
An apparatus includes a memory cell including a magnetic memory element coupled in series with a selector element, the memory cell including a first terminal coupled to a word line driver circuit and a second terminal coupled to a bit line driver circuit, and an amplifier circuit comprising an input terminal coupled to the bit line driver circuit, and an output terminal coupled to a current source configured to conduct a read current. The amplifier circuit is configured to amplify a voltage that is based on a difference between a first voltage across the memory cell and a second voltage across the memory cell.
원문 (중국어)
An apparatus includes a memory cell including a magnetic memory element coupled in series with a selector element, the memory cell including a first terminal coupled to a word line driver circuit and a second terminal coupled to a bit line driver circuit, and an amplifier circuit comprising an input terminal coupled to the bit line driver circuit, and an output terminal coupled to a current source configured to conduct a read current. The amplifier circuit is configured to amplify a voltage that is based on a difference between a first voltage across the memory cell and a second voltage across the memory cell.