Magnetic Memory Device and Method for Using the Same

원문 (중국어)

A method for calibrating a read circuit of a magnetic memory device comprising the steps of setting resistances of first and second target resistors to a same value; setting resistances of first and second calibration resistors to a same minimum value; flowing a reference current through the first target resistor, the first calibration resistor, and a first input terminal of a sense amplifier in series; flowing a calibration current through the second target resistor, the second calibration resistor, and a second input terminal of the sense amplifier in series; determining a potential difference between the first and second input terminals; and if the second input terminal has a higher potential, incrementally increasing the resistance of the second calibration resistor until the first input terminal has a higher potential, or else incrementally increasing the resistance of the first calibration resistor until the second input terminal has a higher potential.