SELECTOR ONLY MEMORY WRITE OPERATION
개요
발명자
Mark Lin; Dimitri Houssameddine; Raj Ramanujan; Christopher J. Petti
IPC 분류
CPC 분류
Technology for programming selector-only memory cells in a cross-point memory structure. The threshold switching memory element may include, but is not limited to, an Ovonic Threshold Switch (OTS). The memory system removes Vth drift in the threshold switching memory elements prior to programming. The Vth drift is removed by applying a first voltage and a second voltage having opposite polarities to all of the SOM cells to be programmed. Then, two programming voltages having the two polarities are applied to program the cells to two states.
원문 (중국어)
Technology for programming selector-only memory cells in a cross-point memory structure. The threshold switching memory element may include, but is not limited to, an Ovonic Threshold Switch (OTS). The memory system removes Vth drift in the threshold switching memory elements prior to programming. The Vth drift is removed by applying a first voltage and a second voltage having opposite polarities to all of the SOM cells to be programmed. Then, two programming voltages having the two polarities are applied to program the cells to two states.