STORAGE DEVICE, ELECTRONIC APPARATUS, AND STORAGE DEVICE CONTROL METHOD
개요
출원인
SONY SEMICONDUCTOR SOLUTIONS CORPORATION
발명자
TARO TATSUNO
IPC 분류
CPC 분류
A storage device according to an embodiment of the present disclosure includes a magnetoresistive storage element that changes to at least four identifiable resistance states, and a write unit that changes the magnetoresistive storage element into the at least four identifiable resistance states by changing a magnetization direction of the magnetoresistive storage element or causing a blow current to flow through the magnetoresistive storage element.
원문 (중국어)
A storage device according to an embodiment of the present disclosure includes a magnetoresistive storage element that changes to at least four identifiable resistance states, and a write unit that changes the magnetoresistive storage element into the at least four identifiable resistance states by changing a magnetization direction of the magnetoresistive storage element or causing a blow current to flow through the magnetoresistive storage element.