MEMORY, MEMORY PROGRAMMING METHOD AND MEMORY SYSTEM

원문 (중국어)

The present application discloses a memory, a memory operation method and a memory system. The memory includes: a memory array and a peripheral circuit, wherein the memory array includes a plurality of memory cells coupled to a first bit line and to a plurality of word lines respectively, wherein the plurality of word lines include a selected word line coupled to a memory cell to be programmed; the peripheral circuit is configured to: apply precharge voltages to the plurality of word lines; sequentially reduce the precharge voltages applied to the plurality of word lines to a first turn-off voltage according to the arrangement order of the memory cells coupled to the plurality of word lines in the memory array; apply a program voltage to a selected word line in the plurality of word lines, and apply a turn-on voltage to other word lines in the plurality of word lines.