FAST, LOW AREA SELF-TEST FOR READ-ONLY MEMORY
개요
출원인
STMicroelectronics International N.V.
발명자
Rupesh SINGH; Ankur BAL; Tejas Kumar HOIZAL
IPC 분류
CPC 분류
Methods for performing a fast read-only memory (ROM) test are disclosed. In the first method, a signature is generated by performing a first set of N read operations utilizing an extended read-cycle, followed by a second set of N read operations utilizing an at-speed read-cycle, where N is an integer greater than or equal to 2. The retrieved data is combined using modulo addition and subtraction operations and stored in a signature register. In the second, a signature is generated by performing two read operations utilizing an extended read-cycle, followed by two read operations utilizing an at-speed read-cycle. The retrieved data is combined using exclusive OR (XOR) operations and stored in a signature register. The final signature is compared to a predetermined value to determine if any errors were detected. Both methods provide a robust test capable of detecting various ROM errors while minimizing test time and complexity.
원문 (중국어)
Methods for performing a fast read-only memory (ROM) test are disclosed. In the first method, a signature is generated by performing a first set of N read operations utilizing an extended read-cycle, followed by a second set of N read operations utilizing an at-speed read-cycle, where N is an integer greater than or equal to 2. The retrieved data is combined using modulo addition and subtraction operations and stored in a signature register. In the second, a signature is generated by performing two read operations utilizing an extended read-cycle, followed by two read operations utilizing an at-speed read-cycle. The retrieved data is combined using exclusive OR (XOR) operations and stored in a signature register. The final signature is compared to a predetermined value to determine if any errors were detected. Both methods provide a robust test capable of detecting various ROM errors while minimizing test time and complexity.