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기록

PLASMA PROCESSING APPARATUS

발명심사 중
3조회수
9청구항 · 1 독립항
§ Ⅰ

개요

IPC 분류

H1J 37/32C23C 16/455H1F 27/24H1F 27/28

CPC 분류

H1J37/3211C23C16/45544H1F27/24H1F27/28H1J2237/332

A plasma processing apparatus includes a processing container, a substrate holder that holds a substrate and accommodated inside the processing container, and a plasma generation mechanism that generates an inductively-coupled plasma. The plasma generation mechanism includes a discharge chamber having a loop shape, an antenna including a magnetic core and a coil wound around the magnetic core, the antenna generating an induced current in the discharge chamber, and a radio-frequency power supply that supplies radio-frequency power to the coil.

원문 (중국어)

A plasma processing apparatus includes a processing container, a substrate holder that holds a substrate and accommodated inside the processing container, and a plasma generation mechanism that generates an inductively-coupled plasma. The plasma generation mechanism includes a discharge chamber having a loop shape, an antenna including a magnetic core and a coil wound around the magnetic core, the antenna generating an induced current in the discharge chamber, and a radio-frequency power supply that supplies radio-frequency power to the coil.