PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS FOR USING A FIRST PLASMA GENERATED FROM A FIRST PROCESSING GAS THAT INCLUDES A CARBON CONTAINING GAS IN A CHAMBER TO FORM A FIRST FILM ON AN INNNER WALL OF THE CHAMBER AND A SUBSTRATE SUPPORT SURFACE
개요
발명자
Daisuke SHIRASAWA
IPC 분류
CPC 분류
The plasma processing method includes: (a) using a first plasma generated from a first processing gas that includes a carbon containing gas in a chamber to form a first layer on an inner wall of the chamber and a substrate support surface for supporting a first substrate in the chamber, (b) placing the first substrate above the substrate support surface on which the first layer is formed, and (c) using a second plasma generated from a second processing gas different from the first processing gas when the first substrate is placed above the substrate support surface to remove the first layer formed on the inner wall of the chamber.
원문 (중국어)
The plasma processing method includes: (a) using a first plasma generated from a first processing gas that includes a carbon containing gas in a chamber to form a first layer on an inner wall of the chamber and a substrate support surface for supporting a first substrate in the chamber, (b) placing the first substrate above the substrate support surface on which the first layer is formed, and (c) using a second plasma generated from a second processing gas different from the first processing gas when the first substrate is placed above the substrate support surface to remove the first layer formed on the inner wall of the chamber.