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기록

SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

발명심사 중
20청구항 · 2 독립항
§ Ⅰ

개요

출원인

Tokyo Electron Limited

발명자

Yohei SANO; Tetsuya SADA

IPC 분류

H1L 21/2H1L 21/66

CPC 분류

H1L21/2016H1L21/2054H1L21/2345H1L22/12

A substrate processing method includes: performing a backside film forming operation that forms a backside film on a back surface of a substrate, wherein the substrate includes a front surface on which a pattern or device structure is formed and the back surface opposite to the front surface, and wherein the backside film is configured to generate stress on the back surface of the substrate upon exposure; and performing an exposing operation that exposes at least a part of the backside film to reduce warpage of the substrate after the backside film forming operation.

원문 (중국어)

A substrate processing method includes: performing a backside film forming operation that forms a backside film on a back surface of a substrate, wherein the substrate includes a front surface on which a pattern or device structure is formed and the back surface opposite to the front surface, and wherein the backside film is configured to generate stress on the back surface of the substrate upon exposure; and performing an exposing operation that exposes at least a part of the backside film to reduce warpage of the substrate after the backside film forming operation.