WAFER CLEANING METHOD AND APPARATUS
개요
출원인
Shanghai Huali Microelectronics Corporation
발명자
Quan ZHANG; Qingpeng ZHAO; Jingang TONG
IPC 분류
CPC 분류
The present disclosure discloses a wafer cleaning method including: providing a wafer; placing the wafer on a chuck in a cleaning chamber, and configuring a first distance between the side not to be cleaned and the surface of the chuck; flowing a protective gas, and configuring a first flow rate of the protective gas; and introducing a cleaning fluid above a side to be cleaned. The magnitude of the first flow rate is configured so that the cleaning fluid does not flow back from the edge of the wafer to the side not to be cleaned. The first distance is configured according to a first pressure formed by the protective gas of the first flow rate on the side not to be cleaned, the first pressure is less than a minimum pressure that causes a pattern structure on the side not to be cleaned of the wafer to collapse.
원문 (중국어)
The present disclosure discloses a wafer cleaning method including: providing a wafer; placing the wafer on a chuck in a cleaning chamber, and configuring a first distance between the side not to be cleaned and the surface of the chuck; flowing a protective gas, and configuring a first flow rate of the protective gas; and introducing a cleaning fluid above a side to be cleaned. The magnitude of the first flow rate is configured so that the cleaning fluid does not flow back from the edge of the wafer to the side not to be cleaned. The first distance is configured according to a first pressure formed by the protective gas of the first flow rate on the side not to be cleaned, the first pressure is less than a minimum pressure that causes a pattern structure on the side not to be cleaned of the wafer to collapse.